features trench fet power mosfet pwm optimized applications symmetrical buck-boost dc/dc converter SI4804BDY vishay siliconix document number: 72061 s-31989?rev. c, 13-oct-03 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.022 @ v gs = 10 v 7.5 30 0.030 @ v gs = 4.5 v 6.5 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 ordering information: SI4804BDY SI4804BDY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 7.5 5.7 continuous drain current (t j = 150 c) a t a = 70 c i d 6.0 4.6 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.7 0.9 maximum power dissipation a t a = 25 c p d 2.0 1.1 w maximum power dissipation a t a = 70 c p d 1.3 0.7 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings limits parameter s y mbol typ max unit mi j ti tabit a t 10 sec r 52 62.5 maximum junction-to-ambient a steady-state r thja 93 110 c/w maximum junction-to-foot (drain) steady-state r thjf 35 40 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4804BDY vishay siliconix www.vishay.com 2 document number: 72061 s-31989?rev. c, 13-oct-03 mosfet specifications (t j = 25 c unless otherwise noted). parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 30 v v gs = 0 v 1 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v v gs = 0 v t j = 85 c 15 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 85 c 15 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 20 a drain source on state resistance b r ds( ) v gs = 10 v, i d = 7.5 a 0.017 0.022 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 6.5 a 0.024 0.030 forward transconductance b g fs v ds = 15 v, i d = 7.5 a 19 s diode forward voltage b v sd i s = 1 a v gs = 0 v 075 12 v diode forward voltage b v sd i s = 1 a, v gs = 0 v 0.75 1.2 v dynamic a total gate charge q g 7 11 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 7.5 a 2.9 nc gate-drain charge q gd ds , gs , d 2.5 gate resistance r g 0.5 1.5 2.6 turn-on delay time t d(on) 9 15 rise time t r v dd = 15 v, r l = 15 10 17 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 19 30 ns fall time t f 9 15 source drain reverse recovery time t i f = 1 7 a di/dt = 100 a/ s ch 1 35 55 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s ch-1 35 55 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI4804BDY vishay siliconix document number: 72061 s-31989?rev. c, 13-oct-03 www.vishay.com 3 typical characteristics (25 c unless noted) mosfet 0 240 480 720 960 1200 0 5 10 15 20 25 30 0 5 10 15 20 25 30 012345 0 5 10 15 20 25 30 0246810 v gs = 10 thru 5 v t c = 125 c -55 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 3 v - on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 3 6 9 12 15 0.000 0.010 0.020 0.030 0.040 0 5 10 15 20 25 30 v ds - drain-to-source voltage (v) c rss v ds = 15 v i d = 7.5 a i d - drain current (a) v gs = 10 v i d = 7.5 a v gs = 10 v v gs = 4.5 v gate charge - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) c oss c iss 4 v on-resistance vs. drain current
SI4804BDY vishay siliconix www.vishay.com 4 document number: 72061 s-31989?rev. c, 13-oct-03 typical characteristics (25 c unless noted) mosfet 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 t j = 150 c i d = 7.5 a 20 10 0.1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a threshold v oltage variance (v) v gs(th) t j - temperature ( c) safe operating area, junction-to-foot v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.1 100 100 ms - drain current (a) i d 1 limited by r ds(on) t c = 25 c single pulse 1 s 10 s dc 1 t j = 25 c 10 ms 1 ms 0 60 100 20 40 power (w) single pulse power, junction-to-ambient time (sec) 80 110 10 -1 10 -2 10 -3
SI4804BDY vishay siliconix document number: 72061 s-31989?rev. c, 13-oct-03 www.vishay.com 5 typical characteristics (25 c unless noted) mosfet 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 93 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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